Světelná emise materiálů založených na křemíku

Abstract

New characterization techniques based on the use of local luminescence probes enable to study the properties of various nanostructures for optoelectronic applications with high (nanometric) spatial resolution. An experimental setup for measuring by one of these methods, namely, the photon emission induced with the tip of a scanning tunnelling microscope (PESTM), has been built.In the future, this setup will be used for studying the luminescence from individual silicon nanocrystals in contrast to traditional macroscopic measurements providing only the information on the light emission from a large number of nanocrystals. Nanocrystalline silicon is a promising material in which the light emission is enhanced, in contrast to monocrystalline silicon, by quantum connement.Optoelectronic properties of two series of samples containing this interesting material were measured.Firstly, a weak electroluminescence signal and reasonable transport properties of samples prepared by embedding electrochemically etched silicon nanocrystals into SiO2 matrix, and secondly, a conductive path created between individual silicon nanocrystals implanted in a silica glass slab were observed.Besides, for the latter series of samples, an interference model was developed and used to describe their structure. All these results are...